Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

Publication Information

Title

Japanese:
English:	Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

Author

Japanese:	長谷川淳一, M.Noguchi, M.Furuhashi, S. Nakata, 岩崎孝之, 小寺哲夫, T.Nishimura, 波多野睦子.
English:	J. Hasegawa, M.Noguchi, M.Furuhashi, S. Nakata, T.Iwasaki, T.Kodera, T.Nishimura, M.Hatano.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 10, 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:	SSDM 2014

Conference site

Japanese:
English:	Tsukuba