Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer

Publication Information

Title

Japanese:
English:	Improvement in the current-gain of a 1.3-µm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer

Author

Japanese:	金子貴晃, 吉田匠, 只野翔太郎, 西山伸彦, 荒井滋久.
English:	Takaaki Kaneko, Takumi Yoshida, Shotaro Tadano, Nobuhiko Nishiyama, SHIGEHISA ARAI.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 55 No. 7 pp. 070301-1-070301-4

Published date

June 1, 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI