Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:
English:	Self-Assembled Monolayer-Based Gate Dielectrics for MoS2 FETs

Author

Japanese:	川那子高暢, 小田俊理.
English:	T. Kawanago, S. Oda.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:	230th ECS Meeting

Conference site

Japanese:
English:	Honolulu

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