Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology

Publication Information

Title

Japanese:
English:	Analysis of Break-Even Time for Nonvolatile SRAM with SOTB Technology

Author

Japanese:	北形大樹, 周藤悠介, 山本修一郎, 菅原聡.
English:	D. Kitagata, Y. Shuto, S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

4B-5

Published date

Feb. 28, 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Electron Device Technology and Manufacturing Conference

Conference site

Japanese:
English:	Toyama