Si上半導体薄膜DR レーザの高効率・高速変調特性

Publication Information

Title

Japanese:	Si上半導体薄膜DR レーザの高効率・高速変調特性
English:

Author

Japanese:	中村なぎさ, 冨安高弘, 平谷拓生, 井上大輔, 福田快, 瓜生達也, 雨宮智宏, 西山伸彦, 荒井滋久.
English:	Nagisa Nakamura, Takahiro Tomiyasu, Takuo Hiratani, Daisuke Inoue, Kai Fukuda, Tatsuya Uryu, Tomohiro Amemiya, Nobuhiko Nishiyama, SHIGEHISA ARAI.

Language

Japanese

Journal/Book name

Japanese:
English:

Volume, Number, Page

No. 7a-A504-10

Published date

Sept. 2017

Publisher

Japanese:
English:

Conference name

Japanese:	第78回応用物理学会秋季学術講演会
English:

Conference site

Japanese:
English: