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Title
Japanese:ハーフメタル・フルホイスラー合金Co2FeSiを用いた垂直磁化型MTJ構造の作製 
English:Preparation of perpendicular MTJ structure using half metallic full Heusler alloy Co2FeS films 
Author
Japanese: 篠原光貴, 高村陽太, 中川茂樹.  
English: Kouki Shinohara, Yota Takamura, Shigeki Nakagawa.  
Language Japanese 
Journal/Book name
Japanese:映情学技報 
English:ITE Tech. Rep. 
Volume, Number, Page vol. 41    no. 17    pp. 35-40
Published date June 8, 2017 
Publisher
Japanese: 
English: 
Conference name
Japanese:マルチメディアストレージ研究会 
English:Technical Group on Multi-media Storage (MMS) 
Conference site
Japanese:仙台 
English:Sendai 
Official URL http://www.ite.or.jp/ken/paper/20170608yAgB/
 
DOI https://doi.org/10.11485/itetr.41.17.0_35
Abstract We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co2FeSi (CFS) alloy thin films with potential application in magnetic tunnel junction (MTJ). CFS/MgO stacked structure showed PMA by setting the thickness of CFS below 0.7 nm. It is confirmed PMA is originated from CFS/MgO interfaces. Furthermore, we found that more stable PMA was obtained by introducing oxygen exposure process after the deposition of CFS layer before the preparation of MgO layer. An elongation toward normal direction of CFS lattice is also useful to induce PMA. Contact with Pd(111) crystal plane for CFS upper layer is also effective to induce OMA especially for upper layer. These processes are very useful as methods to modify the structure and chemical state at the interface and effective to form p-MTJ using CFS layers with both half-metallic ferromagnetism and PMA.

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