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Title
Japanese:Co2FeSi/MgO界面での酸素導入による垂直磁気異方性の発現 
English:Perpendicular magnetic anisotropy induced by oxygen exposure at Co_2FeSi/MgO interfaces 
Author
Japanese: 篠原 光貴, 鈴木 隆寛, 高村 陽太, 中川 茂樹.  
English: Kouki Shinohara, Takahiro Suzuki, Yota Takamura, Shigeki Nakagawa.  
Language Japanese 
Journal/Book name
Japanese:信学技報 
English:IEICE Tech. Rep. 
Volume, Number, Page vol. 116    no. 125    pp. 19-24
Published date July 1, 2017 
Publisher
Japanese: 
English: 
Conference name
Japanese:磁気記録・情報ストレージ研究会（MR） 
English:Technical Committee on Magnetic Recording (MR) 
Conference site
Japanese:東京 
English:Tokyo 
Official URL http://www.ieice.org/ken/paper/201607086bjS/eng/
 
Abstract We attempted to add perpendicular magnetic anisotropy (PMA) to half-metallic full-Heusler Co_2FeSi (CFS) alloy thin films with potential application in magnetic tunnel junction (MTJ). CFS/MgO stacked structure showed PMA by setting the thickness of CFS below 0.7 nm. It was confirmed PMA is originated from CFS/MgO interfaces. Furthermore, we found that more stable PMA was obtained by introducing oxygen exposure process after the deposition of CFS layer before the preparation of MgO layer. This process is very useful as a method to modify the structure and chemical state at the interface and effective to form ferromagnetic CFS layers with both half-metallic ferromagnetism and PMA.

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