Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering

Publication Information

Title

Japanese:
English:	Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering

Author

Japanese:	白取優大, ファリスアキラビンモハマドズルキフリ, 中田和吉, 宮島晋介.
English:	Yuta Shiratori, Faris Akira Bin Mohd Zulkifly, Kazuyoshi Nakada, Shinsuke Miyajima.

Language

English

Journal/Book name

Japanese:
English:	Applied Physics Express

Volume, Number, Page

Vol. 11 031301

Published date

Jan. 31, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI