Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate

Publication Information

Title

Japanese:
English:	Lasing characteristics of 1.3-µm npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate

Author

Japanese:	吉冨翔一, 只野翔太郎, 山中健太郎, 西山伸彦, 荒井滋久.
English:	Shoichi Yoshitomi, Shotaro Tadano, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Volume 57 Number 1 p. 012102

Published date

Dec. 2017

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI