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Title
Japanese: 
English:Chemical Hole Doping into Large-Area Transition Metal Dichalcogenide Monolayers using Boron-Based Oxidant 
Author
Japanese: Hirofumi Matsuoka, Kaito Kanahashi, 田中 直樹, 庄子 良晃, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, 福島 孝典, Taishi Takenobu.  
English: Hirofumi Matsuoka, Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu.  
Language English 
Journal/Book name
Japanese: 
English:Japanese Journal of Applied Physics 
Volume, Number, Page Volume 57    Number 2S2   
Published date Jan. 18, 2018 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
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DOI https://doi.org/10.7567/JJAP.57.02CB15
Abstract Hole carrier doping into single-crystalline transition metal dichalcogenide (TMDC) films can be achieved with various chemical reagents. However, large-area polycrystalline TMDC monolayers produced by a chemical vapor deposition (CVD) growth method have yet to be chemically doped. Here, we report that a salt of a two-coordinate boron cation, Mes2B+ (Mes: 2,4,6-trimethylphenyl group), with a chemically stable tetrakis(pentafluorophenyl)borate anion, [(C6F5)4B]−, can serve as an efficient hole-doping reagent for large-area CVD-grown tungsten diselenide (WSe2) films. Upon doping, the sheet resistance of large-area polycrystalline WSe2 monolayers decreased from 90 GΩ/sq to 3.2 kΩ/sq.

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