Japanese
Home
Search
Horizontal Search
Publication Search
( Advanced Search )
Patent Search
( Advanced Search )
Research Highlight Search
( Advanced Search )
Researcher Search
Search by Organization
Support
FAQ
T2R2 User Registration
Doctoral thesis registration
Support/Contact
About T2R2
What's T2R2?
Operation Guidance
Leaflets
About file disclosure
Related Links
Tokyo Tech
STAR Search
NII IR Program
Home
>
Help
Publication Information
Title
Japanese:
ECR-MBE法で作製したSi基板上GaN薄膜(t<200nm)の高品質化への試み ―作製プロセスの見直しとその検討―
English:
Technical trial into higher crystalline quality of GaN films grown on Si substrates by ECR-MBE under reduced plasma damage -reconsideration of growth process and examination-
Author
Japanese:
淀徳男
,
井上直哉
,
塩尻大士
,
譚ゴオン
,
熊谷典子
,
松田晃史
,
吉本護
.
English:
Tokuo Yodo
,
Naoya Inoue
,
daishi shiojiri
,
Geng Tan
,
Noriko Kumagai
,
Akifumi Matsuda
,
MAMORU YOSHIMOTO
.
Language
Japanese
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Mar. 27, 2013
Publisher
Japanese:
English:
Conference name
Japanese:
2013年 第60回 応用物理学会春季学術講演会
English:
The 60th JSAP Spring Meeting, 2013
Conference site
Japanese:
厚木
English:
Atsugi
Official URL
https://confit.atlas.jp/guide/event/jsap2013s/top?lang=ja
©2007
Tokyo Institute of Technology All rights reserved.