Device characteristics of rare-earth doped amorphous oxide semiconductors

Publication Information

Title

Japanese:	Device characteristics of rare-earth doped amorphous oxide semiconductors
English:	Device characteristics of rare-earth doped amorphous oxide semiconductors

Author

Japanese:	T. Kamiya, K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono.
English:	T. Kamiya, K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 25, 2018

Publisher

Japanese:
English:

Conference name

Japanese:	The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)
English:	The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)

Conference site

Japanese:	Tokyo
English:	Tokyo