Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters

Publication Information

Title

Japanese:
English:	Virtually Nonvolatile Retention SRAM cell Using Dual-Mode Inverters

Author

Japanese:	北形大樹, 吉田隼, 山本修一郎, 菅原聡.
English:	Kitagata, H. Yoshida, S. Yamamoto, S. Sugahara.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 15, 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S Conference 2018)

Conference site

Japanese:
English:	San Francisco