Electrical properties of selectively grown GaN channel for FinFETs

Publication Information

Title

Japanese:
English:	Electrical properties of selectively grown GaN channel for FinFETs

Author

Japanese:	濱田拓也, 向井勇人, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, 黒岩宏紀, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生.
English:	Takuya Hamada, Hayato Mukai, Tokio Takahashi, Toshihide Ide, Mitsuaki Shimizu, Hiroki Kuroiwa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Nov. 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:	International Workshop on Nitride Semiconductors (IWN2018)

Conference site

Japanese:
English:	Kanazawa

Award

Student Award