Passivation effect of SiOx interfacial layer in MoOx hole selective contact | Tokyo Tech Research Repository (T2R2)

Publication Information

Title

Japanese:	MoOx正孔選択層におけるSiOx界面層挿入によるパッシベーション効果
English:	Passivation effect of SiOx interfacial layer in MoOx hole selective contact

Author

Japanese:	中田和吉.
English:	Kazuyoshi Nakada.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 18, 2018

Publisher

Japanese:
English:

Conference name

Japanese:	第79回応用物理学会秋季学術講演会
English:	The 79th JSAP Autumn Meeting

Conference site

Japanese:	名古屋
English:	Nagoya

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