MoS2 Film Formation by RF Magnetron Sputtering for Thin Film Transistors

Publication Information

Title

Japanese:	TFT応用に向けたRFマグネトロンスパッタリング法によるMoS2膜の形成
English:	MoS2 Film Formation by RF Magnetron Sputtering for Thin Film Transistors

Author

Japanese:	大橋匠.
English:	Takumi Ohashi.

Type

Type:	Thesis (Ph.D.) Exam Summary
Country:	Japan

Language

English

Organization name

Tokyo Institute of Technology

Report number

甲第10864号

Conferred date

2018/03/26

Judge

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