Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor

Publication Information

Title

Japanese:
English:	Effect of increasing gate capacitance on the performance of a p-MoS2/HfS2 van der Waals heterostructure tunneling field-effect transistor

Author

Japanese:	張文倫, 祢津誠晃, 金澤徹, 雨宮智宏, 宮本恭幸.
English:	W Zhang, S. Netsu, T. Kanazawa, T. Amemiya, Y. Miyamoto.

Language

English

Journal/Book name

Japanese:
English:	Jpn. J. Appl. Phys

Volume, Number, Page

58, SBBH02 (2019)

Published date

Jan. 15, 2019

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI