Passivation of SiO2/SiC interface with La2O3capped oxidation

Publication Information

Title

Japanese:
English:	Passivation of SiO2/SiC interface with La2O3capped oxidation

Author

Japanese:	Munekiyo, S., Lei, Y.M., Natori, K., Iwai, H., Kawanago, T., Kakushima, K., Kataoka, K., Nishiyama, A., Sugii, N., 若林整, Tsutsui, K., Furuhashi, M., Miura, N., Yamakawa, S..
English:	Munekiyo, S., Lei, Y.M., Natori, K., Iwai, H., Kawanago, T., Kakushima, K., Kataoka, K., Nishiyama, A., Sugii, N., Hitoshi Wakabayashi, Tsutsui, K., Furuhashi, M., Miura, N., Yamakawa, S..

Language

English

Journal/Book name

Japanese:
English:	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Volume, Number, Page

pp. 114-116

Published date

2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI