GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Publication Information

Title

Japanese:
English:	GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Author

Japanese:	Nakajima, A., Nishizawa, S.-I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., 若林整, Iwai, H..
English:	Nakajima, A., Nishizawa, S.-I., Ohashi, H., Kayanuma, R., Tsutsui, K., Kubota, S., Kakushima, K., Hitoshi Wakabayashi, Iwai, H..

Language

English

Journal/Book name

Japanese:
English:	Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volume, Number, Page

Vol. 2015-June pp. 357-360

Published date

2015

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI