Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering

Publication Information

Title

Japanese:
English:	Potential of MISFET with HfN gate dielectric formed by ECR plasma sputtering

Author

Japanese:	Han, H.S., Han, D.H., 大見俊一郎.
English:	Han, H.S., Han, D.H., Shun-ichiro OHMI.

Language

English

Journal/Book name

Japanese:
English:	Electronics Letters

Volume, Number, Page

Vol. 49 No. 7 pp. 493-495

Published date

2013

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI