Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology

Publication Information

Title

Japanese:
English:	Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology

Author

Japanese:	Shuto, Y., 山本修一郎, Sugahara, S..
English:	Shuto, Y., Shuichiro Yamamoto, Sugahara, S..

Language

English

Journal/Book name

Japanese:
English:	2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings

Volume, Number, Page

Published date

2015

Publisher

Japanese:
English:

Conference name

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English:

Conference site

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DOI