Nonvolatile power-gating field-programmable gate array using nonvolatile static random access memory and nonvolatile flip-flops based on pseudo-spin-transistor architecture with spin-transfer-torque magnetic tunnel junctions

Publication Information

Title

Japanese:
English:	Nonvolatile power-gating field-programmable gate array using nonvolatile static random access memory and nonvolatile flip-flops based on pseudo-spin-transistor architecture with spin-transfer-torque magnetic tunnel junctions

Author

Japanese:	山本修一郎, Shuto, Y., Sugahara, S..
English:	Shuichiro Yamamoto, Shuto, Y., Sugahara, S..

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics

Volume, Number, Page

Vol. 51 No. 11 PART2

Published date

2012

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI