Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN

Publication Information

Title

Japanese:
English:	Theoretical prediction of strain-induced carrier effective mass modulation in 4H-SiC and GaN

Author

Japanese:	黒岩祐一郎, 松下雄一郎, 原田航, 大場史康.
English:	Y. Kuroiwa, Y. Matsushita, K. Harada, F. Oba.

Language

English

Journal/Book name

Japanese:
English:	Applied Physics Letters

Volume, Number, Page

vol. 115 pp. 112102

Published date

Aug. 2019

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

Official URL

DOI