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Title
Japanese: 
English:Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers 
Author
Japanese: M. Kondo, T. Uemura, 石割 文崇, 梶谷 孝, 庄子 良晃, M. Morita, N. Namba, Y. Inoue, Y. Noda, T. Araki, 福島 孝典, T. Sekitani.  
English: M. Kondo, T. Uemura, F. Ishiwari, T. Kajitani, Y. Shoji, M. Morita, N. Namba, Y. Inoue, Y. Noda, T. Araki, T. Fukushima, T. Sekitani.  
Language English 
Journal/Book name
Japanese: 
English:ACS Appled Materials & Interfaces 
Volume, Number, Page Vol. 11    Issue 44    Page 41561–41569
Published date Oct. 9, 2019 
Publisher
Japanese: 
English: 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL https://pubs.acs.org/doi/10.1021/acsami.9b13056
 
DOI https://doi.org/10.1021/acsami.9b13056
Abstract In this study, ultralow 1/f noise organic thin-film transistors (OTFTs) based on parylene gate dielectrics modified with triptycene (Trip) modifiers were fabricated. The fabricated OTFTs showed the lowest 1/f noise level among those of previously reported OTFTs. It is well known that 1/f noise causes degradation of signal integrity in analog and digital circuits. However, conventional OTFTs still possess high 1/f noise levels, and the factors that strongly affect 1/f noise are still ambiguous. In this work, the effect of gate dielectric surface on 1/f noise was investigated. First, by comparing OTFTs composed of various channel lengths, we revealed that contact resistance did not affect 1/f noise. Second, we compared parylene OTFTs with and without a self-assembled Trip modifier layer in terms of 1/f noise and trap density of states (Trap DOS). The experiments revealed that a specific Trip modifier layer suppresses the shallow Trap DOS in the OTFTs, leading to a low 1/f noise. Moreover, the 1/f noise level and Trap DOS of various kinds of OTFTs were comprehensively compared, which highlighted that the 1/f noise of OTFTs strongly depends on the gate dielectric surface. Finally, detailed analysis of the gate dielectric interface led us to conclude that the disorder of gate dielectrics and the crystalline quality of semiconductor films are related to shallow Trap DOS, which correlates with 1/f noise.

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