Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout

Publication Information

Title

Japanese:
English:	Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout

Author

Japanese:	安重英祐, 宗田伊理也, 角嶋邦之, 筒井一生, 若林整.
English:	Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi.

Language

English

Journal/Book name

Japanese:
English:	Journal of the Electron Devices Society (J-EDS)

Volume, Number, Page

vol. 8 pp. 1244-1250

Published date

Nov. 2018

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI