Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode

Publication Information

Title

Japanese:
English:	Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode

Author

Japanese:	モリナレイエスホエル, 岩塚正晴, 星井拓也, 大見俊一郎, 舟窪浩, A. Hori, I. Fujiwara, 若林整, 筒井一生, 角嶋邦之.
English:	J. Molina, H. Iwatsuka, T. Hoshii, S. Ohmi, H. Funakubo, A. Hori, I. Fujiwara, H. Wakabayashi, K. Tsutsui, K. Kakushima.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

May 2019

Publisher

Japanese:
English:

Conference name

Japanese:
English:	235th ECS Meeting

Conference site

Japanese:
English:	Dallas