Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

Publication Information

Title

Japanese:
English:	Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration

Author

Japanese:	K. Matsuura, 濱田昌也, 濱田拓也, 谷川晴紀, 坂本拓朗, W. Cao, K. Parto, A. Hori, 宗田伊理也, 川那子高暢, 角嶋邦之, 筒井一生, A. Ogura, BANERJEE KAUSTAV, 若林整.
English:	K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

June 2019

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Int. Workshop on Juction Technology (IWJT2019)

Conference site

Japanese:
English:	Kyoto