Solution-Processed Silicane Field-Effect Transistor: Operation Due to Stacking Defects on the Channel

Publication Information

Title

Japanese:
English:	Solution-Processed Silicane Field-Effect Transistor: Operation Due to Stacking Defects on the Channel

Author

Japanese:	Hideyuki Nakano, Kenji Ito, Atsushi Miura, 真島豊.
English:	Hideyuki Nakano, Kenji Ito, Atsushi Miura, Yutaka Majima.

Language

English

Journal/Book name

Japanese:
English:	Advanced Functional Materials

Volume, Number, Page

30 1908746 (6)

Published date

Feb. 20, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI