La2O3 gate dielectrics for AlGaN/GaN HEMT

Publication Information

Title

Japanese:
English:	La2O3 gate dielectrics for AlGaN/GaN HEMT

Author

Japanese:	陳江寧, 川那子高暢, 若林整, 筒井一生, 岩井洋, "D. Nohata", 野平博司, 角嶋邦之.
English:	"J. Chen", "T. Kawanago", "H. Wakabayashi", "K. Tsutsui", "H. Iwai", "D. Nohata", "H. Nohira", "K. Kakushima".

Language

English

Journal/Book name

Japanese:
English:	Microelectronics Reliability

Volume, Number, Page

Vol. 60 pp. 16-19

Published date

2016

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI