A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer

Publication Information

Title

Japanese:
English:	A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based Electrodes using CeOx buffer layer

Author

Language

English

Journal/Book name

Japanese:
English:	Semiconductor Science and Technology

Volume, Number, Page

Vol. 29 No. 11

Published date

Oct. 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

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