Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Publication Information

Title

Japanese:
English:	Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Author

Japanese:	川那子高暢, 角嶋邦之, 片岡好則, 西山彰, 杉井信之, 若林整, 筒井一生, 名取研二, 岩井洋.
English:	"T. Kawanago", "K. Kakushima", "Y. Kataoka", "A. Nishiyama", "N. Sugii", "H. Wakabayashi", "K. Tsutsui", "K. Natori", "H. Iwai".

Language

English

Journal/Book name

Japanese:
English:	IEEE Transaction on Electron Devices(T-ED)

Volume, Number, Page

Vol. 61 No. 3 pp. 785-791

Published date

Feb. 2014

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI