Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment

Publication Information

Title

Japanese:
English:	Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment

Author

Japanese:	角嶋邦之, 舘喜一, 足立学, 岡本晃一, S. Sato, 宋 �漢, 川那子高暢, AHMET PARHAT, 筒井一生, 杉井信之, 服部健雄, H. Iwai.
English:	K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 15, 2008

Publisher

Japanese:
English:

Conference name

Japanese:
English:	the 38th European Solid-State Device Research Conference (ESSDERC2008)

Conference site

Japanese:
English:	Edinburgh