Structural and Luminescence Characteristics of Trench Defects in Red-emitting InGaN/GaN on Single-crystal GaN Substrate

Publication Information

Title

Japanese:
English:	Structural and Luminescence Characteristics of Trench Defects in Red-emitting InGaN/GaN on Single-crystal GaN Substrate

Author

Japanese:	丹下貴志, 松方妙子, 三宮工.
English:	Takashi Tange, Taeko Matsukata, Takumi Sannomiya.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 29, 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:	2020 International Conference on Solid State Devices and Materials

Conference site

Japanese:
English:	ALL-VIRTUAL

Official URL