High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer

Publication Information

Title

Japanese:
English:	High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer

Author

Japanese:	宋禛漢, 太田惇丈, 星井拓也, 若林整, 筒井一生, 角嶋邦之.
English:	Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:
English:	Japanese Journal of Applied Physics (JJAP) (Rapid Communication)

Volume, Number, Page

Vol. 60 Page 30901

Published date

Feb. 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI