A simulation study on the transient leakage current analysis of a GaN epitaxial layer

Publication Information

Title

Japanese:
English:	A simulation study on the transient leakage current analysis of a GaN epitaxial layer

Author

Japanese:	西田宗史, 星井拓也, 若林整, 筒井一生, 角嶋邦之.
English:	H. Nishida, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Oct. 2020

Publisher

Japanese:
English:

Conference name

Japanese:
English:	Electrochemical Society (ECS) PRIME 2020

Conference site

Japanese:
English:	Hawaii