Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

Publication Information

Title

Japanese:
English:	Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices

Author

Japanese:	渡辺正裕, Naoyuki Shigyo, 星井拓也, Kazuyoshi Furukawa, 角嶋邦之, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, 宗田伊理也, 若林整, 中島昭, Shin-ichi Nishizawa, 筒井一生, Toshiro Hiramoto, 大橋弘通, 岩井洋.
English:	Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai.

Language

English

Journal/Book name

Japanese:
English:	Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)

Volume, Number, Page

pp. 217-219

Published date

Apr. 8, 2021

Publisher

Japanese:
English:

Conference name

Japanese:	IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021)
English:

Conference site

Japanese:
English:	Chengdu