Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density

Publication Information

Title

Japanese:	Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density
English:	Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density

Author

Japanese:	Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya.
English:	Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Sept. 6, 2021

Publisher

Japanese:
English:

Conference name

Japanese:	2021 International Conference on Solid State Devices and Materials (SSDM 2021)
English:	2021 International Conference on Solid State Devices and Materials (SSDM 2021)

Conference site

Japanese:
English: