Origin of high-density hole doping by isovalent Te substitution in SnSe

Publication Information

Title

Japanese:	Origin of high-density hole doping by isovalent Te substitution in SnSe
English:	Origin of high-density hole doping by isovalent Te substitution in SnSe

Author

Japanese:	Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya.
English:	Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

July 6, 2021

Publisher

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English:

Conference name

Japanese:	The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)
English:	The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)

Conference site

Japanese:
English: