Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches

Publication Information

Title

Japanese:
English:	Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches

Author

Japanese:	吉田隼, 塩津勇作, 北形大樹, 山本修一郎, 菅原聡.
English:	Hayato Yoshida, Yusaku Shiotsu, Daiki Kitagata, Shuichiro Yamamoto, Satoshi Sugahara.

Language

English

Journal/Book name

Japanese:
English:	IEEE Open Journal of Circuits and Systems

Volume, Number, Page

Vol. 2 pp. 520-533

Published date

Aug. 17, 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English: