GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation

Publication Information

Title

Japanese:
English:	GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation

Author

Japanese:	Chen Si-Meng, TSAI Sung Lin, 水谷一翔, 星井拓也, 若林整, 筒井一生, 角嶋邦之.
English:	Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima.

Language

English

Journal/Book name

Japanese:
English:

Volume, Number, Page

Published date

Nov. 2021

Publisher

Japanese:
English:

Conference name

Japanese:
English:	International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-

Conference site

Japanese:
English: