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Title
Japanese:3次元磁気メモリの実現に向けたCoPtの電解めっき膜 
English:Electrophoretically deposited CoPt film for realization of 3D domain wall motion memory 
Author
Japanese: HUANG TONGSHUANG, 高村 陽太, 齋藤 美紀子, Md M. Hasan, 荒木 大輝, 本間 敬之, 葛西 伸哉, 山田 圭介, 園部 義明, 小野 輝男, 中川 茂樹.  
English: T. Huang, Y. Takamura, M. Saito, Md M. Hasan, D. Araki, T. Homma, S. Kasai, K. Yamada, Y. Sonobe, T. Ono, S. Nakagawa.  
Language English 
Journal/Book name
Japanese:信学技報 
English:IEICE Tech. Rep. 
Volume, Number, Page vol. 122    no. 297    pp. 11-16
Published date Dec. 1, 2022 
Publisher
Japanese:電気情報通信学会 
English:THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS 
Conference name
Japanese:磁気記録・情報ストレージ研究会（MRIS） 
English:IEICE Technical Committee on Magnetic Recording & Information Storage (MRIS) 
Conference site
Japanese:愛媛県 
English:Ehime 
Official URL https://ken.ieice.org/ken/paper/20221208qCoM/eng/
 
Abstract CoPt alloy is the appropriate material for the stacking layers owing to strong PMA for Co-rich alloy and controllability of Ku by changing the Co composition. CoPt stacking layers with different alternatively Ku are required. To deposit such stacking layers, the electrodeposition condition has been studied. CoPt layers with various compositions were successfully deposited by adjusting the applied voltage. However, the surface thin film deposited by DC electrodeposition was too rough for spin device fabrication. We conducted pulse electrodeposition and obtained an ultra-thin film with smooth morphology and good magnetic property.

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