Japanese
Home
Search
Horizontal Search
Publication Search
( Advanced Search )
Patent Search
( Advanced Search )
Research Highlight Search
( Advanced Search )
Researcher Search
Search by Organization
Support
FAQ
T2R2 User Registration
Doctoral thesis registration
Support/Contact
About T2R2
What's T2R2?
Operation Guidance
Leaflets
About file disclosure
Related Links
Tokyo Tech
STAR Search
NII IR Program
Home
>
Help
Publication Information
Title
Japanese:
Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density
English:
Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density
Author
Japanese:
Kaiwen Li,
Kota Hanzawa
,
Keisuke Ide
,
Kosuke Matsuzaki
,
Takayoshi Katase
,
Hidenori Hiramatsu
,
Hideo Hosono
, Zhang Qun,
Toshio Kamiya
.
English:
Kaiwen Li,
Kota Hanzawa
,
Keisuke Ide
,
Kosuke Matsuzaki
,
Takayoshi Katase
,
Hidenori Hiramatsu
,
Hideo Hosono
, Zhang Qun,
Toshio Kamiya
.
Language
English
Journal/Book name
Japanese:
English:
Volume, Number, Page
Published date
Sept. 6, 2021
Publisher
Japanese:
English:
Conference name
Japanese:
2021 International Conference on Solid State Devices and Materials (SSDM 2021)
English:
2021 International Conference on Solid State Devices and Materials (SSDM 2021)
Conference site
Japanese:
English:
©2007
Tokyo Institute of Technology All rights reserved.