Bottom contact 100nm channel-length α-In2Se3 in-plane ferroelectric memory

Publication Information

Title

Japanese:
English:	Bottom contact 100nm channel-length α-In2Se3 in-plane ferroelectric memory

Author

Japanese:	MIAOShurong, 新田亮介, 伊澤誠一郎, 真島豊.
English:	Shurong Miao, Ryosuke Nitta, Seiichiro Izawa, YUTAKA MAJIMA.

Language

English

Journal/Book name

Japanese:
English:	Advanced Science

Volume, Number, Page

10 2303032

Published date

Aug. 2023

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI