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Title
Japanese:High-Fidelity Directed Self-Assembly Using Higher-chi Polystyrene-Block-Poly(Methyl Methacrylate) Derivatives for Dislocation-Free Sub-10 nm Features 
English:High-Fidelity Directed Self-Assembly Using Higher-chi Polystyrene-Block-Poly(Methyl Methacrylate) Derivatives for Dislocation-Free Sub-10 nm Features 
Author
Japanese: 前川伸祐, Lander Verstraete, Hyo Seon Suh, 瀬下武広, Takahiro Dazai, Kazufumi Sato, 畠山歓, Yuta Nabae, 早川晃鏡.  
English: Shinsuke Maekawa, Lander Verstraete, Hyo Seon Suh, Takehiro Seshimo, Takahiro Dazai, Kazufumi Sato, Kan Hatakeyama, Yuta Nabae, Teruaki Hayakawa.  
Language English 
Journal/Book name
Japanese:Advanced Functional Materials 
English:Advanced Functional Materials 
Volume, Number, Page Vol. n/a    No. n/a    pp. 2421066
Published date Jan. 2025 
Publisher
Japanese:John Wiley & Sons, Ltd 
English:John Wiley & Sons, Ltd 
Conference name
Japanese: 
English: 
Conference site
Japanese: 
English: 
Official URL https://doi.org/10.1002/adfm.202421066
 
DOI https://doi.org/10.1002/adfm.202421066
Abstract Abstract Extreme ultraviolet (EUV) lithography currently enables the creation of ultrafine patterns. However, as miniaturization progresses, stochastic defects become a significant challenge. Directed self-assembly (DSA) of block copolymers (BCPs) has gained attention for pattern rectification to improve the quality of EUV patterns or for density multiplication to obtain sub-10ﾂ�nm features. DSA is one of the most promising miniaturization processes because it does not cause stochastic defects. However, dislocation defects are an important issue in density multiplication using strongly segregating BCP. This study demonstrates the use of DSA on 300ﾂ�mm silicon wafers with higher-Flory-Huggins interaction parameter (?) polystyrene-block-poly(methyl methacrylate) derivatives for sub-10ﾂ�nm features. These higher-? polymers, synthesized from polystyrene-block-[poly(glycidyl methacrylate)-random-poly(methyl methacrylate)] (PS-b-PGM) and 2,2,2-trifluoroethanethiol (PS-b-PGFM), show excellent reproducibility of perpendicular lamellae. Line patterns with a sub-10ﾂ�nm half-pitch are successfully formed by DSA on 300ﾂ�mm wafers. Line patterns without parallel-oriented structures or dislocations can be achieved by optimizing the chemical guides and annealing conditions. A polymer with a higher ?N value exhibits improved roughness in the resulting line patterns.

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