Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs

Publication Information

Title

Japanese:
English:	Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs

Author

Japanese:	T. Sasaki, 杉山弘樹, Y. Yoshiya, 星拓也, 宮本恭幸, F. Nakajima.
English:	T. Sasaki, H. Sugiyama, Y. Yoshiya, T. Hoshi, Y. Miyamoto, F. Nakajima.

Language

English

Journal/Book name

Japanese:
English:	Jpn J. Appl. Phys.

Volume, Number, Page

vol. 65

Published date

Feb. 2026

Publisher

Japanese:
English:

Conference name

Japanese:
English:

Conference site

Japanese:
English:

DOI