Current-driven magnetic-orientation reversal achieved in GaMnAs-based double barrier TMR structures at extremely low-threshold current density

論文・著書情報

タイトル

和文:
英文:	Current-driven magnetic-orientation reversal achieved in GaMnAs-based double barrier TMR structures at extremely low-threshold current density

著者

和文:	H. Toyao, Y. Tanikawa, M. Watanabe, J. Yoshino.
英文:	H. Toyao, Y. Tanikawa, M. Watanabe, J. Yoshino.

言語

English

掲載誌/書名

和文:
英文:	Abstracts of The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors

巻, 号, ページ

pp. 69

出版年月

2006年8月

出版者

和文:
英文:

会議名称

和文:
英文:	The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors

開催地

和文:
英文:	Sendai