Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures

論文・著書情報

タイトル

和文:	Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures
英文:	Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures

著者

和文:	M. Watanabe, H. Toyao, J. Okabayashi, J. Yoshino.
英文:	M. Watanabe, H. Toyao, J. Okabayashi, J. Yoshino.

言語

Japanese

掲載誌/書名

和文:	Abstracts of The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors
英文:	Abstracts of The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors

巻, 号, ページ

pp. 9-10

出版年月

2006年12月

出版者

和文:
英文:

会議名称

和文:	The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors
英文:

開催地

和文:
英文: