Proceedings of the 33rd IEEE Photovoltaic Specialists Conference
巻, 号, ページ
211
出版年月
2008年5月
出版者
和文:
英文:
会議名称
和文:
英文:
33rd IEEE Photovoltaic Specialists Conference
開催地
和文:
英文:
San Diego, CA, USA
アブストラクト
We have successfully prepared silicon quantum dots / amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H) / silicon rich hydrogenated amorphous silicon carbide (a-Si1+xC) multilayers for thin-film solar cell applications. By hydrogen plasma treatment (HPT), hydrogen was almost uniformly incorporated into Si-QDSL and the defect density in the Si-QDSL was successfully reduced from 1.83×1019 to 6.56×1017 &cm#x2212;3 after HPT for 2 hours. We have prepared the first solar cell using Si-QDSL as a light absorption layer. From the results of the quantum efficiency and the photoluminescence measurement, the photovoltaic effect from Si-QDSL was confirmed.
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