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タイトル
和文: 
英文:Effects of Nitrogen on the Electrical Properties of Si Quantum Dots Superlattice using a-SiC Matrix 
著者
和文: 黒川 康良, 富田 茂樹, 宮島 晋介, 山田 明, 小長井 誠.  
英文: Yasuyoshi Kurokawa, Shigeki Tomita, Shinsuke Miyajima, Akira Yamada, Makoto Konagai.  
言語 English 
掲載誌/書名
和文: 
英文:Proceedings of the 24th European Photovoltaic Solar Energy Conference and Exhibition 
巻, 号, ページ         pp. 398-403
出版年月 2009年9月 
出版者
和文: 
英文: 
会議名称
和文: 
英文:The 24th European Photovoltaic Solar Energy Conference and Exhibition 
開催地
和文: 
英文:Hamburg, Germany 
アブストラクト It was found that the dark conductivity of a stoichiometric a-SiC thin film, which is used as barrier layers in a Si quantum dots superlattice (Si-QDSL), increased drastically after thermal annealing above 800 oC. This is due to the crystallization of an a-SiC phase in the films. To resolve this problem, N2 gas was introduced during the deposition of stoichiometric a-SiC thin films. As a result, the dark conductivity of the films annealed at either 900 or 1000 oC was reduced below 10-9 S/cm, since the introduction of nitrogen atoms into the films prevented the a-SiC phase from crystallizing during the annealing. N-containing Si-QDSLs were prepared and the dark conductivity was measured. The dark conductivity of the N-containing Si-QDSLs was in the range of 10-6 to 10-8 S/cm, suggesting that the Si-QDSLs got close to intrinsic. The solar cell structure using a N-containing Si-QDSL as a light absorption layer was fabricated. The open circuit voltage and short circuit current were improved compared with the Si-QDSL without the introduction of nitrogen atoms. The quantum efficiency data indicated that the absorption edge was shifted to higher energy as the diameter of Si-QDs decreases, suggesting the quantum size effect.

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