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タイトル
和文: 
英文:Preparation of nanocrystalline silicon in amorphous SiC matrix for Si quantum dots superlattice 
著者
和文: 黒川 康良, 宮島 晋介, 山田 明, 小長井 誠.  
英文: Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai.  
言語 English 
掲載誌/書名
和文: 
英文:Proceedings of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion 
巻, 号, ページ Vol. 1        pp. 138-141
出版年月 2006年5月 
出版者
和文: 
英文: 
会議名称
和文: 
英文:IEEE the 4th World Conference on Photovoltaic Energy Conversion 
開催地
和文: 
英文:Hawaii, USA 
アブストラクト We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.

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