Proceedings of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion
巻, 号, ページ
Vol. 1
pp. 138-141
出版年月
2006年5月
出版者
和文:
英文:
会議名称
和文:
英文:
IEEE the 4th World Conference on Photovoltaic Energy Conversion
開催地
和文:
英文:
Hawaii, USA
アブストラクト
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC:H)/ silicon rich hydrogenated amorphous silicon carbide (a-Si1-xCx) multilayers. Raman scattering spectroscopy and transmission electron microscope (TEM) measurement revealed that silicon quantum dots were formed in only a-Si1-xCx layers. We also found that the size of silicon quantum dots can be controlled by the thickness of a-Si1-xCx layers.
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